Experimental Study SEU Induced by Low Energy Proton on nm SRAM

摘要

正Advanced semiconductor technologies are increasingly being used in spacecraft systems. With the device feature size decreases, the single-event susceptibility of static random access memory (SRAM) increases rapidly. In our research, experimental results are presented on proton induced SEU on a 55 nm 4M×18bit SRAM, the upsets data was obtained using proton with energies ranging from 1 MeV to 15 MeV on HI-13 tandem accelerator. Experimental results showed that direct ionization from the