Reduction and compensation of lattice stress in high energy P+ and P+Sb implanted silicon

摘要

The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of PtSb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×l013/cm2 is 2.2 times greater than at a dose of 3.6×1012/cm 2. The stress decreases rapidly as the annealing time increases.It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6× 1016/cm3, whereas the stress becomes positive when the concentration is greater than 6 × 1016/cm3. The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1 × 1016/cm2, the stress is negative after annealing, and it is positive when the Sb dose is higher than 1× 1016/cm2. The stress is close to zero for a Sb implantation dose of 1 × 101 6/em 2. The best compensation dose of Sb to P implantation dose of 3 × 1016/cm2 is 1× 1016/cm2.