Coexistance of C40 and C54 TiSi_2 during the solid statereaction of Ti/Mo/Si system

摘要

The effect of a 0.9 nm Mo interlayer at the interface of Ti film deposited on a Si substrate on phase formation of TiSi2 during annealing has been studied by using transmission electron micro-diffraction technique. When Ti/Mo/Si was an- nealed at low temperature as 550℃ for 30 mm in Ar ambient, a metastable phase. i.e., hexagonal C40 TiSi2, and the equilibrium phase. i.e., orthorhombic C54 TiSi2, were both detected. The experimental patterns of the C40 and C54 compare well with the simulated ones.