Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements

摘要

The ion implantation uniformity is of vital importance for an ion implanter.In this paper,we report the,uniformity measurement for a large current ion implanter(LC-16 type) by implanting of 190-keV Ar ions into Si to 3×1016 atoms/cm2,followed by Rutherford backscattering spectroscopy(RBS) and sheet resistance measurement providing quantitative information on spatial distribution of dopants.The implant doses obtained from RBS at selected points of the sample give a spatial uniformity of <5%,which are confirmed by the sheet resistance measurement.While sheet resistance is an indirect method for dose evaluation of ion-implanted samples,RBS provides a competent technique for calibration of the ion implantation system.And both measurements show that good uniformity can be achieved for the ion implanter by tuning of the scanning process.