PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

摘要

Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-Si C samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-Si C.Moreover, the V_(Si)O_C^0 and V_(Si)O_C^(-1) centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.