基于碳纳米管背电极的晶体硅太阳能电池

摘要

碳纳米管(CNTs)具有优异的电学与光电性能,可用作太阳能电池的空穴传输材料.本文将CNTs薄膜置于晶体硅(c-Si)太阳能电池的背面,以取代铝背电极,构成c-Si/CNTs太阳能电池. c-Si/CNTs太阳能电池的短路电流密度可达35. 5 mA·cm-2 ,比刷涂铝背极c-Si电池的高8% .表明CNTs具有很强的空穴收集和输运能力,可用作c-Si太阳能电池的背电极.用稀氢氟酸(HF)处理c-Si/CNTs界面,放置100 h后,电池的填充因子由44. 5%提高到62. 6% ,转换效率由7. 1%提高到10. 9% .%Due to their outstanding charge collecting and transport ability, carbon nanotubes (CNTs) can be used as electrode ma-terials in solar cells. Here, we replaced the aluminum back electrode in a crystalline silicon (c-Si) solar cell with a CNT thin film to form a c-Si/CNT film solar cell. The c-Si/CNT solar cell had a high short-circuit current density of 35. 5 mA cm-2 , which is higher than that using aluminum as the back electrode, indicating that CNTs can be used as hole transport materials in silicon-based solar cells. The power conversion efficiency of the c-Si/CNT solar cell was increased from 7. 1% to 10. 9% by dropping a few drops of a dilute HF solution (5 wt% ) at the interface of the c-Si and the CNT film. This is because HF etches away the oxide layer on the c-Si surface, increases the interfacial contact area between the CNT film and the c-Si and decreases the recombination rate of electron/hole pairs.