为提高元件半导化原理并提高元件的氧气灵敏度,对以SrTiO3为基材的样品分别在强还原气体条件和大气条件下的N型电压敏、电容双功能元件和P型氧气敏感元件,分别测试了N型元件的压敏电压U1mA等电参数和P型元件在不同的温度下的阻温特性、氧敏特性,并进行了TPD测量.研究表明氧空位是在SrTiO3晶体中杂质扩散、实现半导化的重要条件,因此控制氧空位的浓度成为制备钙钛矿型半导体功能陶瓷元件的重要因素；还原气氛烧结产生的氧空位是材料实现N型半导化的重要手段；受主杂质所产生的氧空位促进了环境氧与晶格氧的交换,是材料实现P型半导化的重要手段,也提高了元件的氧气灵敏度.%The roles and effects of oxygen vacancy in perovskite oxide functional materials were researched. The SrTiO3 specimens with different additive were prepared. The n-type semiconductive component with double functions, capacitor and varistor were sintered in reducing atmosphere, and the p-type oxygen sensors were prepared in normal atmosphere. The electronic performance parameters, as breakdown voltage VImA, were measured for varistor. It was measured for p-type oxygen sensors, dependence of resistance on temperature, and the desorbed oxygen on the specimens by means of TPD. Some research results are shown as follows. The oxygen vacancy is important condition for additions diffusion in perovskite crystal, so the oxygen vacancy must be controlled in order to prepare perovskite semiconduction oxide functional ceramic components. It is n-type semiconductor if oxygen vacancies are the result from reducing at atmosphere sinter. It is clear also that the partial substitution of acceptor addition brings about a p-type semiconductor and an increase in oxygen vacancies, resulting in an increase in oxygen exchange simultaneously between specimen and ambient. Therefore, it is possible to obtain SrTiO3 component exhibiting high oxygen sensitivity.
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