区域熔炼法制备高纯铟的研究

摘要

In order to prepare high-purity indium, the zone-refining device and conditions were optimized. The purity of indium was increased from 99.98% to 99.999% with the decrease of total impurity content from 211.003 μg/g to 9.864μg/g under the protection of high-purity argon at a treating rate of 3 cm/h by changing the ratio of melting zone width to ingot length( l/L) according to the melting frequency( n) , that is, l/L=0.2, 0.1 and 0.05 at n=1~4, 5~9 and 10~16, respectively. The relationship between impurity distribution and metal microstructure variation in the process of zone-refining of the indium ingot was also discussed based on the results of ICP-MS, SEM, XRD and DSC analyses.%为获得高纯金属铟，对区域熔炼装置和工艺条件进行了优化。在熔区移动速度为3 cm/h时，根据熔炼次数（ n）改变熔区宽度与料锭长度比（l/L），即n＝1～4时l/L＝0．2，n＝5～9时l/L＝0．1，n＝10～16时l/L＝0．05，在高纯氩气保护下将含量约为99．98％的原料铟提纯至99．999％，其杂质总量从211．003μg/g降低至9．864μg/g。此外，还利用电感耦合等离子质谱（ ICP-MS）、扫描电镜（ SEM）、X射线衍射（ XRD）和差热分析（ DSC）等方法讨论了区熔过程中金属铟杂质分布与金属微观结构演变之间的关系。