为了得到高纯度的硫化亚锡薄膜,利用恒电压法成功制备了硫化亚锡微米棒薄膜,并将该薄膜在200℃真空退火1h.结构和形貌分析表明:该薄膜是由2～5 μm的细棒组成,并且优先沿着(101)晶面方向生长.拉曼光谱表明该薄膜具有较高的纯度.%In order to get SnS with high purity, the SnS microrods films were prepared by constant potential cathodic electro-eposition method and annealed at 200℃under vacuum conditions for 1 h. The structure and morphology analysis showed the films were composed of micro-sized rods. The length of the rods was in a range of 2 ~5 micro and preferentially oriented along the (101) plane. Raman spectra indicated that the microrods films had a high purity.
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