首页> 中文期刊> 《西华大学学报(自然科学版)》 >A位Y3+替代α-BZN陶瓷结构及介电性能研究

A位Y3+替代α-BZN陶瓷结构及介电性能研究

         

摘要

采用传统的固相反应法制备了(Bi1.5-xYxZn0.5)(Zn05Nb1.5)O7(BYZN,0≤x≤0.2 mol)陶瓷,借助XRD 、SEM和Agilent 4284A测试仪,研究了A位替代对α-BZN结构和介电性能的影响.研究表明:当掺杂量x(Y3+)<0.15 mol时,样品相结构中没有出现其他杂相,为单一立方焦绿石相;随掺杂离子的进一步增加,样品中出现少量第二相.陶瓷样品的晶粒尺寸和介电性能随着Y3+掺杂量的增加而呈现有规律的变化;低温介电弛豫峰的峰形逐渐宽化;x(Y3+)≤0.15 mol时,1 MHz下弛豫峰峰值温度Tm由-117℃逐渐增加到-108℃.%Ceramics ( Bi1.5-xYxZn0.5) (Zn0.5Nb1.5)O7 ( BYZN,0≤x≤0. 2mol) was prepared by a solid phase reaction. The structure and dielectric properties of Y doped on A site were studied by X - ray diffraction method and scanning electron microscope and Agilent 4284A testing analyzer. The samples exhibited a single cubic pyrochlore phase when Y3+ substitution x <0. 15 mol ,and the second phase appeared when X3+ content increased. The grain size and dielectric properties of BYZN samples changed regularly with the increasing of doping substitution. The peak temperature of dielectric relaxtion moved from - 117 ℃ to - 108℃ at 1MHz and the εr - T peak was decreased and broaden when substitution x≤0. 15 mol.

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