储能电容与光导开关的工作模式

摘要

介绍了以光导开关为核心的高压纳秒电脉冲系统组成.半绝缘GaAs光导开关在初始偏置电场26.7 kV/cm条件下受到1 ns、光能20 μJ、波长1 064 nm激光照射.根据SRH模型和有限元法计算载流子浓度和光导开关时域电阻,考虑Blumlein 传输线等效电容电压的时域变化,进行了输出脉冲的模拟计算.模拟和实验表明,在Blumlein传输线放电电容很小(27.2 pF)的情况下,电容放电的充分性导致光导开关的线性工作范围的上限至少可达到26.7 kV/cm.%Pulsed power system on basis of photoconductive semiconductor switch (PCSS) is introduced. The output pulse is simulated according to shockley-read-hall model (SRI-IM), finite element method (FEM), and time-dependent voltage from the equivalent capacitance of Blumlein transmission line. PCSS made from semi-insulating GaAs (SI GaAs) is biased under high electric field 26.7 kV/cm and illuminated by laser at the wavelength of 1.064 micrometer for 1 nanosecond with 20 micro-joules. The agreement between the simulation result and the experimental result shows that in the condition of small capacitance of Blumlein transmission line (27.2 pF) PCSS can operate in linear mode in which the biased electrical field is at least up to 26.7 kV/cm.