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PbS胶质量子点太阳能电池的性能参数及主要结构

     

摘要

基于胶质量子点(CQD)半导体材料的第三代薄膜太阳能电池,因为材料的量子尺寸调谐特性,在宽光谱太阳能发电领域有其独特的优势。该文将CQD薄膜近似为传统半导体材料,介绍了CQD太阳能电池的工作原理及表征电池性能的主要参数,指明了CQD材料与块半导体材料的差异,分析了影响CQD电池性能的材料方面的几个因素。按照研究的时间顺序,回顾了6种结构的PbS CQD电池发展情况及最新现状,指出提升材料性能,改进材料中光电转换过程的物理模型,及优化器件结构都能够帮助提高CQD电池的效率。%The third generation photovoltaic devices based on solution-processed colloidal quantum dot (CQD) have particular advantage for harvesting sun’s broad spectrum, because of the size tunability of CQD’s bandgap. In the review, firstly, the fundamentals of solar cell and four key parameters were introduced. Secondly, evident deviations of CQD films from the homogenous bulk semiconductor were pointed out and the effects of CQD’s properties on solar cell efficiency were analyzed. Finally, some main device architectures of PbS CQD solar cells developed in recent years were summarized. Advanced CQD thin films, more accurate exciton transport physical model, and better device architectures would help to improve the efficiency of CQD solar cells.

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