By using multistage RF amplifier circuit and the high voltage pulse modulation technology, the high gain S-band miniaturized 200 W GaN power amplifier module is successfully fabricated. The drive amplifier circuit adopts GaAs power chip for power combining. The last stage amplifier circuit is based on the gate-length(0.5 μm) GaN High Electron Mobility Transistor(HEMT) chip, and the heat distribution is improved by means of the multi-sub-cell structure. Through the internal matching, the matching network of two cells of 24 mm gate width GaN device is successfully designed, so is the high voltage pulse modulation circuit. The test results show that under the input power of 10 dBm, the gate voltage of -5 V, the drain voltage of 32 V, and TTL modulated signal, the output frequency is in the range of 3.1-3.5 GHz, the output power is above 200 W, and the Power Additional Efficiency (PAE) is more than 55%. The module size is 2.4 mm×38 mm×5.5 mm.%采用多级射频放大电路以及高压脉冲调制技术,实现了 S 波段高增益小型化200 W功率模块的研制.驱动放大电路采用 GaAs功率单片进行功率合成;末级放大电路依托栅长(0.5 μm) GaN 高电子迁移率晶体管(HEMT)芯片,选取多子胞结构来改善热分布,通过内匹配技术设计完成了双胞总栅宽24 mm GaN芯片的匹配网络,并设计高压脉冲调制电路提供电源,成功研制出了小型化的 S波段200 W内匹配 GaN功率模块.测试得出该模块实现了在输入功率10 dBm,栅极电压-5 V,漏极电压32 V,TTL调制信号输入条件下,输出频率在3.1~3.5 GHz处,输出功率大于200 W,功率附加效率(PAE)大于55%.模块实际尺寸为2.4 mm×38 mm×5.5 mm.
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