Ag纳米颗粒对Si纳米线阵列光催化性能影响

摘要

采用原位还原-金属辅助化学刻蚀法制备表面修饰 Ag 纳米颗粒的 Si 纳米线阵列,采用 SEM、EM、UV-Vis 和电化学工作站等手段进行表征,通过光电化学池研究光催化分解水/甲醇溶液(体积比1∶1)实验,分析修饰不同浓度的 Ag 纳米颗粒的等离子体效应对 Si 纳米线阵列光催化分解水效率的影响。结果表明,随着 Ag 纳米颗粒浓度的增加,Ag 纳米颗粒/Si 纳米线阵列复合结构的开路电压迅速减小,短路电流先增大后减小,而当 Ag 纳米颗粒以较小的浓度均匀分布于 Si 纳米线上时,可得到最高的效率。揭示了 Ag 纳米颗粒的浓度对 Si 纳米线阵列光催化性能的影响规律。%Decorating Silicon nanowires array (SiNWs array)with plasmonic Ag nanoparticles (AgNPs)is a novel strategy to fabricate high efficient visible-light photocatalysts.Introducing AgNPs in SiNWs array can enhance its light absorption while it also can cause more interfacial recombination sites.So,it is important to study the effect of AgNPs on SiNWs for sunlight-driven solar water splitting.In this report,different concentrations of Ag nanoparticles (AgNPs)were used to decorate SiNWs arrayand fabricate photocatalysts.The results reveal that with the increase of AgNPs'concentration,the open circuit voltage decreases rapidly while the short circuit current first increases and then decreases.When AgNPs evenly distributed in the SiNWs with smaller concentration,the highest efficiency can be obtained.Briefly,the influence of AgNPs'concentration to SiNWs'photocatalytic ability is revealed in this paper.