液封浮区法生长GaAs晶体中的热应力

摘要

The thermal stress calculation for a 3 inch diameter gallium arsenide crystal grown by liquid encapsulation full floating zone(LEFZ) method under microgravity has been conducted by using the finite element numerical method. The crystal is assumed to be in a pseudo-steady axisymmetric state and to behave as isotropic linearly elastic body. The effect of the thickness of the encapsulant and the rotation rate of crystal and feed rod on the thermal stress is analyzed.%用有限元法对微重力环境下液封浮区(LEFZ)法生长的3英寸GaAs单晶中的热应力进行求解.假设晶体处于准定常状态且为轴对称的各向同性线弹性体.分析了液封厚度、晶体和进料棒转速对晶体中热应力分布的影响.