电子隧穿位置和原子实的库仑势对高阶阈上电离的影响

摘要

利用半经典方法研究了氩原子在强激光场中的高阶阈上电离。通过与simple-man模型和考虑非零隧穿位置的改进模型对比，发现电子隧穿位置和原子实的库仑势对电子再碰撞过程有重要影响。电子隧穿位置主要对单返回再碰撞起作用；而原子实的库仑势在整个再碰撞过程中都不可忽视，但在多次返回再碰撞中才表现出明显的作用。%We investigate high-order above threshold ionization with a semiclassical model. In comparison with the simple-man model and the improved model with nonzero tunneling site, the influences of tunneling site and Coulomb potential of the parent ion on recollision dynamics are identified. The former is found to be crucial for the single return collisions, while the latter, which is non-negligible for the whole recollision process, manifests for the electrons that return to the vicinity of parent ion more than once.