GaSe晶体的掺S生长及性能研究

摘要

当生长掺S的GaSe单晶时，熔体的强烈对流和溶质扩散使得生长出大尺寸的晶体较为困难。本实验采用改进的Bridgman炉，并结合坩埚旋转技术，成功生长出了较大尺寸的GaSe0.89S0.11单晶体(f20×60 mm3)。采用X射线粉末衍射仪、能谱仪、纳米压痕仪和傅里叶红外光谱仪测量其结构、成分、机械和光学性质。测试结果表明，质量分数为2.38%的 S掺杂的GaSe晶体(GaSe0.89S0.11)没有发生结构相变；它的机械性能得到了明显的改善，同时光学性能也得到了一定的提高。%It is difficult to obtain high quality sulfur-doped GaSe single crystal due to the intensive convection and so-lution diffusion in the melt. High quality GaSe0.89S0.11 single crystal with dimensions off20 mm×60 mm was success-fully grown by Bridgman method using modified furnace with crucible rotation technique. The crystal was character-ized by using energy dispersive spectrometer, X-ray diffractometer, nanoindentation, and Fourier infrared spectrometer. The measured results indicate that the sulfur-doped GaSe crystal with sulfur level of 2.38wt% shows significantly im-proved mechanical properties. The infrared transmission tests indicate that it has slightly higher transmittance in the range of 0.62–12.5 µm than the pure GaSe crystal. The results demonstrate that the modified Bridgman method could be used to produce high quality sulfur-doped GaSe crystals.