准同型相界附近0.02Pb（Zn1/3Nb2/3）O3-0.50Pb（Ni1/3Nb2/3）O3-0.48Pb（ZrxTi1-x）O3陶瓷压电性能研究

摘要

0.02Pb(Zn1/3Nb2/3)O3-0.50Pb(Ni1/3Nb2/3)O3-0.48Pb(ZrxTi1-x)O3 (0.29≤x≤0.34) quaternary piezo-electric ceramics were prepared by conventional solid reaction process. The crystallites structure and micro structure ,the piezoelectric and dielectric properties of the system were investigated. With the increase of Zr/Ti ratio,phrase transforms from tetragonal to hombohedral.It was found that the morphotropic phrase boundary (MPB) composition was in the vicinity of x=0.32.The 0.02PZN-0.50PNN-0.48PZ32T ceramics sintered at 1 240℃exhribited the high piezoelectric properties of piezoelectric constants d33=715 pC/N,electromechanical coupling factor kp=0.541,remnant polarization Pr=25.5μC/cm2,coercive field Ec=5.6 kV/cm. New developed piezoelectric materials are promising for high-performance piezoelectric applications and the simple method may have a great prospect industrial production.%采用传统固相反应法制备四元系0.02Pb(Zn1/3Nb2/3)O3-0.50Pb(Ni1/3Nb2/3)O3-0.48Pb(ZrxTi1-x)O3(0.29≤x≤0.34)陶瓷.观察样品的晶相结构和显微结构，测试压电性能和介电性能.随着Zr/Ti比的增大，晶相从四方相向三方相转变.发现准同型相界位置在x=0.32附近.1240℃烧结的0.02PZN-0.50PNN-0.48PZ32T陶瓷展现了良好的压电性能，压电常数d33为715 pC/N，机电耦合系数kp为0.541，剩余极化强度Pr为25.5μC/cm2，矫顽场强Ec为5.6 kV/cm.新的压电材料适合高性能压电器件应用，且简单的制备方法给生产带来极大便利.