硒化铅量子点/石墨烯可见光敏晶体管的研究

摘要

Graphene phototransistor have gained considerable attention in the last decade due to their high carrier mobility and their light absorption in a broad wavelength range, however, the performance of the phototransistor is very low because of the low light absorbance of graphene.In this study, we synthetized PbSe colloidal QDs by solution processing and obtained the enhanced stability of PbSe colloidal QDs via a post-synthetic ammonium chloride treatment.PbSe/graphene hybrid phototransistors were fabricated and quantum dots(QDs) could service as absorb light efficiently.A phototransistors showed the good performances under the illumination with 370-895 nm wavelength.Especially a high responsivity of phototransistors could reach 106 AW-1under the illuminations of 540 nm light.%石墨烯晶体管以其高载流子迁移率和宽波长范围光吸收在光探测方面得到了广泛研究.然而石墨烯极低的光吸收率限制了其响应灵敏度.以溶液法用氧化铅、硒粉、TOP为反应物一步合成硒化铅量子点,与湿法转移的单层铜基底石墨烯复合,制备硒化铅量子点/石墨烯光敏晶体管,利用石墨烯的高迁移率和量子点对光的高吸收效率提高晶体管的光响应,测试表明晶体管对波长370895 nm范围内的光均有良好响应,在波长540 nm光强0.528 μW/cm2下的响应率达到了106 A/W.