Mn掺杂对PLZT陶瓷制备及性能的影响

摘要

通过水热法制备Mn掺杂的PLZT陶瓷.采用X射线衍射（XRD）和扫描电镜（SEM）分别对陶瓷进行微观结构和表面形貌的分析.结果表明,制备得到的PLZT室温下是纯四方相晶体,Mn掺杂会增强PLZT的四方对称性,而过多的Mn掺杂会抑制晶粒长大.介电性能测试表明,该陶瓷体系具有明显的弥散相变特征,Mn掺杂会使PLZT的居里温度降低,一定量Mn掺杂会增大介电常数,但损耗也明显增加.%Mn-doped PLZT ceramics were prepared by hydrothermal synthesis in the paper.The microstructure and surface morphology were characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM). The results exhibit that the PLZT is single-phase tetragonal crystal system at room temperature.With the increase of Mn-doping amounts,symmetry of the samples tend to be tetragonal.The excess Mn-doping amounts will hinder the grain growth.The tests of dielectric properties show that the samples have obvious diffused phase transition and curie temperature reduce with the increase of Mn-doping amounts.A certain Mn-doping amounts can increase dielectric constant of the samples,but the dielectric loss also increase greatly.