微晶硅薄膜稳定性的研究

摘要

通过改变硅烷浓度对微晶硅薄膜材料进行沉积,研究了硅烷浓度与微晶硅晶化率的关系,拉曼光谱的拟合结果表示硅烷浓度越高微晶硅薄膜晶化率越低;研究了不同晶化率的微晶硅薄膜的光衰退现象,结果显示材料的晶化率越高,暗电导率越高,光敏性越低.对微晶硅光电稳定性进行了研究,结果显示微晶硅材料的组成特性决定了其结构特性,材料的光衰退现象主要来自其内部微结构的影响,薄膜材料中的非晶硅组分是导致材料光衰退的主要原因,材料晶化率越高,非晶硅成分含量越低,材料稳定性越好.过渡区附近的微晶硅材料的结构及光电特性更适于制备微晶硅电池.%In this thesis, plasma enhanced chemical vapor deposition (PECVD) was used for the preparation of μc-Si:H films and solar cells, The relationship between SC and crystalline volume fraction of μc-Si: H materials for solar cells was well researched. The Raman spectrum showed that, the crystalline volume fraction was increased with the decreased of the SC. The light induced degradation of intrinsic μc-Si: H single layer material with different crystalline volume fraction deposited were studied. The results clearly showed that the magnitude of relative light induced degradation was closely related to material structure. Amorphous fraction was the key determining factor to light induced degradation. Microcrystalline silicon with transition region was more suitable for the manufacturing of stable Microcrystalline silicon solar cells due to the structure and optical properties.