10GHz铌酸锂(LiNbO3)电光调制器的电极设计

摘要

用准静态分析法分析了铌酸锂光强度调制器的电极结构参数.为了尽可能减少微波和光波之间的折射率失配,提高光强度调制器的工作带宽和降低驱动电压,电极的宽度和间隙必须具有特定的要求,特别是电极的厚度.为了实现10 GHz的带宽,在无缓冲层的X-切铌酸锂光强度调制器的电极设计中,在同时考虑电极传输损耗的情况下,地电极宽度S2为1 000μm、中心电极宽度S1为32μm、电极间隙G为8μm、电极厚度d可取6μm.%To decrease the mismatch between the light and microwave velocities, the electrode structure of optical waveguide intensity modulator is designed by using quasi-static analysis method. The thick electrode structure of X- cut LiNbO3 electro-optic modulator at 10 GHz bandwidth with a half-wave voltage of 4.72 V has been demonstrated.