首页>
外国专利>
Being the electrooptic modulator null lithium niobate electrooptic modulator which possesses the dope semiconductor - metal contact breaker plate bias electrode
Being the electrooptic modulator null lithium niobate electrooptic modulator which possesses the dope semiconductor - metal contact breaker plate bias electrode
展开▼
机译:作为电光调制器,铌酸锂空电光调制器具有掺杂半导体-金属接触断路器极板偏置电极
展开▼
页面导航
摘要
著录项
相似文献
摘要
Lithium niobate modulator structure for reducing the DC bias fluctuation (30) is provided, wherein the lithium niobate modulator structure (30), DC sections of multiple RF and (38, 40) or one and a (44, 54) highly doped semiconductor layer patterned over the (34) optical waveguide having a (42) section, a metal or bonding metal layer (50), one of (44, 54) semiconductor layer The contact with the part, is formed RF section (42) and (46) a buffer layer. In addition, a method for producing a lithium niobate electro-optic modulator having a structure described above are also provided.
展开▼