Electro-optic modulator having a bias electrode in the contact base metal - doped semiconductor for reducing the DC bias fluctuation

摘要

Lithium niobate modulator structure for reducing the DC bias fluctuation (30) is provided, wherein the lithium niobate modulator structure (30), DC sections of multiple RF and (38, 40) or one and a (44, 54) highly doped semiconductor layer patterned over the (34) optical waveguide having a (42) section, a metal or bonding metal layer (50), one of (44, 54) semiconductor layer The contact with the part, is formed RF section (42) and (46) a buffer layer. In addition, a method for producing a lithium niobate electro-optic modulator having a structure described above are also provided.