在钆表面磁控溅射 Y 薄膜后真空退火,使Gd 基体中的 N、O 等间隙杂质扩散到 Y 薄膜中进而去除基体金属中 N、O 等气体杂质.该方法对去除间隙杂质效果明显,钆中 N、O 浓度显著降低,钆中 O、N浓度分别由1．87×10-4和9．7×10-5降为5．5×10-5,3．3×10-5.具体除杂量与其初始浓度和退火温度及时间有关,所得高纯钆用氧氮分析仪测量 O 含量,并对实验过程及结果进行讨论.%A novel two-step purification of Gd was devised.Y was deposited on the free surface of Gd samples by magnetron sputtering,and the deposited samples were subsequently annealed to diffuse oxygen and nitrogen from the Gd bulk to the Y coating layer.Due to the different annealing temperature,the removal degree of oxy-gen and nitrogen was different.In addition,it was found that each removal degree was attributable to a differen-tial refining effect caused by the difference of initial impurity concentration.The trace oxygen and nitrogen as analyzed by O-N analyzer reduced from 1.89×10 -4 ,9.7×10 -5 for raw Gd to 5.5 ×10 -5 ,3.3×10 -5 .The differ-ent process parameters were optimized and the analysis results were discussed.
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