Cu2O敏化ZnO纳米棒的制备及其对光电性质的影响

摘要

以透明导电玻璃(FTO)为基底,采用电化学沉积法制备了Cu2O敏化的ZnO纳米棒阵列复合薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电镜(TEM)、高分辨电镜(HRTEM)、电化学工作站研究了不同Cu2O沉积时间对复合薄膜的晶体结构、形貌、光电性质的影响.结果表明,电化学沉积的Cu2O纳米晶可以与ZnO纳米棒形成异质结,提高ZnO纳米薄膜的光电转换效率,当Cu2O的沉积时间为5 min时,Cu2O敏化ZnO纳米棒薄膜的光电转换效率最高.%Cu2O sensitized ZnO nanorod array films were prepared on transparent conductive glass (FTO) by electrochemical deposition method.The microstructure,surface morphologies and photoelectric properties of Cu2O sensitized ZnO films were characterized by X-ray diffraction (XRD),field emission scanning electron microscopy (SEM),transmission electron microscopy (TEM),high-resolution transmission electron microscopy (HRTEM),X-ray energy spectrum (EDS) and electrochemical workstation (CHI601C).The results show that electrochemical deposition of Cu2O nanocrystals can be formed heterojunction with the ZnO nanorods and improve the photoelectric conversion efficiency of ZnO thin films.The photoelectric conversion efficiency of Cu2O sensitized ZnO nanorod films is the highest when the deposition time of Cu2O is 5 min.