基于二维数值仿真技术的局部场氧化形状建模

摘要

In this study the "beak" patterns generated by localized oxidation technology (LOCOS) in CMOS were stimulated with process stimulation software S-Tsuprem4, and a simplified model was developed for the patterns. Further, critical parameters of the model were obtained through least-square-root regressions with an error of regression at 7e-4, which eventually led to the establishment of the expression of the model in the form of multiple functions covering respective ranges. The model enables more feasible applications of the " beak" structure in the fields of numeric stimulation as well as design of semi-conductor parts.%通过工艺仿真软件S-Tsuprem4对CMOS中常用的硅局部场氧化(local oxidation silicon,LOCOS)技术所生成的“鸟嘴”图形进行了仿真,提出了一种形状模型.随后利用最小二乘拟合法得到相对应的参数,拟合误差为7e-4,并最后以分段函数的方式给出了模型的表达式.该模型可以使“鸟嘴”结构更加方便应用于半导体器件的数值仿真和设计.