h-BN掺杂对金刚石晶体结构的影响

摘要

报道了在Fe70Ni30合金触媒和石墨系体中,掺杂六角立方氮化硼(h-BN)和硼(B)生长金刚石单晶的过程.研究发现,h-BN和B掺杂对于金刚石生长条件及形貌等具有较大的影响,其中h-BN掺杂生长金刚石的最低生长压力达到了6.2 GPa,同时晶体呈绿色条状.说明h-BN和B在金刚石晶体生长以及取代碳原子进入晶格时起到了不同的作用.通过X射线衍射及光电子能谱等表征手段,分析了硼氮对金刚石晶体结构的影响,以及硼氮在金刚石中的化学环境及成键方式.在此基础上阐述了硼氮掺杂的形成机制.%In this work, we report the growth process of single crystal diamond by doping boron (B) and hexagonal boron nitride (h-BN) in the system of Fe70Ni30 alloy catalyst and graphite. The doping of B and h-BN has signifi-cant effect on the growth condition and morphology of diamonds. The lowest growth pressure of h-BN doped diamond is 6.2Gpa and the crystals have a green strip morphology. This results indicates that B and h-BN have different effects on the diamond growth and have different ways to replace carbon atoms. We analyze the effect of doping B and N at-oms on the structure of diamond,and the chemical environment of B and N atoms in diamond by using X-ray diffrac-tion and photoelectron spectroscopy. The mechanism of B and N doped diamond is also demonstrated.