TiO2基紫外探测器的制备及退火工艺对光电性能的影响

摘要

TiO2 UV detector with excellent photoelectronic properties was prepared by RF magnetron sputtering and suitable annealing process. The effect of annealing process on the photoelectronic properties of TiO2 UV detector was investigated using SEM, XRD, and the detection of photoelectronic properties. It was found that the grain size of TiO2 was increased with the increase of annealing temperature , and the change of the photoelectronic properties of TiO2 UV detector is caused by the variation of the number of grain boundary and defect. After treated at 500℃ for 2 h, the photocurrent was nearly 2.5 orders of magnitude higher than the darkcurrent and the optical response at ultraviolet range was nearly 2 orders of magnitude higher than that at visible light region. The high sensitivity and visible blind properties of obtained UV detector had been achieved.%采用磁控溅射方法,通过不同工艺的退火处理,制备了光电性能优良的TiO2基紫外探测器.通过紫外光电性能测试、扫描电子显微镜( SEM)观察及X射线衍射(XRD)分析,研究了退火工艺对探测器光电性能的影响规律.结果表明:随着退火温度的增加,TiO2晶粒尺寸显著增大,晶界和缺陷数量的变化是导致TiO2基紫外探测器的光电性能随退火工艺变化的根本原因.经500℃/2h退火后,紫外探测器的光电流高出暗电流近2.5个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备紫外探测器达到了高辐射灵敏度和可见盲特性的要求.