射频功率对红外光学用类金刚石膜结构和性能的影响

摘要

The infrared antiflection film is produced on the germanium substrates with CH4 as source gas by RF-PECVD process. The Raman spectrum results figure out that the coating has the characteristic peaks of DLC in which the D peaks between 1200 cm-1 and 1450 cm-1 while G peaks between 1500 cm-1 and 1700 cm-1, thus DLC films is successfully obtained. In order to obtain the better processing conditions, the effect of RF power to the infrared transmittance and hardness is researched. Meanwhile, the reason why the higher sp3 concentration, the higher infrared transmittance and the harder film is analyzed.%利用射频等离子体增强化学气相沉积技术，以CH4为气源，在单晶锗基底上制备了具有红外增透效果的薄膜。Raman光谱分析表明，D峰和G峰分别位于1200～1450 cm－1和1500～1700 cm－1之间，说明薄膜具有典型的类金刚石的特征峰，可知镀制的薄膜是类金刚石膜。通过研究射频功率对类金刚石膜红外透过率以及硬度等性能的影响，分析了类金刚石膜的红外透过率和纳米硬度随着薄膜中sp3含量的增加而增大的原因，从而找出一种利用PECVD方法制备DLC膜的最佳工艺参数。