S波段10W LDMOS功率管匹配电路设计

摘要

There are many advantages of RF LDMOS, such as high output power, high gain, high linearity and excellent heat stability. RF LDMOS is widely used in the field of mobile communication station, digital broadcasting television emission, RF communication and microwave radar system. Impendence matching is the key task of LDMOS transistor application circuit. LDMOS transistor matching circuit is used for realizing max output power transmission. The paper designed matching circuit for CETC58 research institution’ S band 10 W LDMOS transistor, using microwave simulation tool ADS. After exhaustive adjusting the matching circuit, the technical index of input return loss, power gain, output power, efficiency and harmonic wave ware accorded with the design aim. The output power, gain and efficiency of S band LDMOS power transistor are bigger than 13.8 W, 12.4 dB and 37.9%respectively in the band of 3.1~3.4 GHz.%RF LDMOS功率管具有高输出功率、高增益、高线性、良好的热稳定性等优点，广泛应用于移动通信基站、数字广播电视发射以及射频通信领域、微波雷达系统。阻抗匹配是LDMOS功率管应用电路设计的关键任务，LDMOS功率管匹配电路的主要任务是实现功率管的最大功率传输。文中选择中国电子科技集团公司第58研究所研制的S波段10 W LDMOS功率管，利用微波仿真工具ADS设计外匹配电路。经过精心调试后，S波段LDMOS功率管输入回波损耗、增益、输出功率、效率、谐波等技术指标达到设计要求。完成匹配电路设计的S波段LDMOS功率管在3.1~3.4 GHz频率范围内，输出功率大于13.8 W，功率增益大于12.4 dB，效率大于37.9%。