一种低温漂、高精度CMOS带隙基准源设计

摘要

Based on the basic principles of linear segmented compensation and the output branch structure of the internal temperature of negative feedback, this paper proposes a novel structure which is simple and adapts to high order compensation methods of different opening directions. It also designs a low temperature float high precision voltage reference circuit based on the current mirror structure. Simulation by the CSMC 0. 35 μm CMOS process in- dicates this bandgap reference can reach a temperature coefficient of 2. 84 ℃ from -40 to125 ℃. PSRR can reach -70. 6 dB and -63.36 dB at 100 Hz and 10 kHz PSRR, respectively. When the power supply voltage is in the range 2 ~ 3 V, the voltage fluctuation value is 3 mV/V. The proposed BGR has good overall performance.%基于线性分段补偿的基本原理，依据输出支路内部的温度负反馈结构，提出了一种结构简单、适应不同开口方向的高阶补偿方法。并设计了一种基于电流镜结构的低温漂、高精度的电压基准电路。CSMC0．35p,mCMOS工艺的仿真结果表明，经高阶补偿的电压模基准，在-40～125℃温区范围内温度系数为2．84×10^-6／℃．低频100Hz时的PSRR达到-70．6dB，10kHz为一63．36dB。当电源电压在2—3V范围内变化时，其电压值波动为3mV／V。整个带隙基准电压源具有较好的综合性能。