利用 TCAD 半导体器件仿真软件对中低倍聚光光伏系统中应用的 N 型插指背接触(Interdigitated Back Contact，IBC)单晶硅太阳电池的电学性能进行了仿真研究，全面系统地分析了不同衬底电阻率和光强对电池短路电流密度、开路电压、填充因子及转换效率的影响。结果表明：IBC太阳电池的电学性能受到衬底电阻率和光强的显著影响。当光强较小（0.1 W/cm2）时，随着衬底电阻率的增大，IBC太阳电池转换效率随之降低，最优的衬底电阻率为0.5Ω·cm。当光强较高（0.5~5 W/cm2）时，随着衬底电阻率的增大，IBC太阳电池转换效率随之增大，最优的衬底电阻率为3Ω·cm。当光强进一步增大（10~50 W/cm2）时，随着衬底电阻率的增大，IBC太阳电池转换效率呈现出先增大后减小的变化特点，最优的衬底电阻率为2Ω·cm。%The electrical properties of N-type interdigitated back contact mono-crystalline silicon solar cell used in medium and low CPV systems were studied by using TCAD semiconductor device simulation software. The influences of substrate resistivity and light intensity on IBC solar cell’s short-circuit current density, open-circuit voltage, filling factor and conversion efficiency were studied comprehensively and systematically. The research shows that the IBC solar cell’s electrical properties are affected by the substrate resistivity and light intensity significantly. When the light intensity is low (0.1 W/cm2), the IBC solar cell conversion efficiency decreases with the increase of substrate resistivity, and the optimum substrate resistivity is 0.5Ω·cm. When the light intensity is higher (0.5~5 W/cm2), the IBC solar cell conversion efficiency increases with the increase of substrate resistivity, and the optimum substrate resistivity is 3Ω·cm. When the light intensity increases further (10~50 W/cm2), the IBC solar cell conversion efficiency presents first increases and then decreases with the increase of resistivity substrate, and the optimum substrate resistivity is 2Ω·cm.
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