Insulated gate bipolar transistor(IGBT)often works in overheating and large temperature fluctuating conditions,when the heating damage accumulates to a certain degree,the failure of IGBT module is most likely occur, which leads to huge losses in electric system. If we can estimate the life of the module according to lifetime prediction model,the module can be replaced before it is going to fail,so it is possible to avoid losses caused by sudden failure of the module. Therefore,the IGBT temperature cycling test was done and the case temperature was detected simultaneously,then researched the relationship between IGBT lifetime and case temperature which was more accessible. Based on the existing life models,provided an improved lifetime prediction model which is proved having the higher accuracy.%绝缘栅双极型晶体管（insulated gate bipolar transistor，IGBT）在工作过程中经常要承受过热和较大的温度波动，当热损伤达到一定程度时，模块极有可能出现失效，这会给电力系统造成巨大的危害。如果能根据寿命预测模型提前预估模块的寿命，便可以在模块即将失效之前进行更换，从而避免模块突然失效带来的损失。因此，考虑在检测模块壳温的条件下进行IGBT的温度循环试验，研究工况中易获得的壳温与IGBT寿命的关系模型。在已有寿命模型的基础上，提出改进的寿命预测模型，经试验数据验证准确度更高。
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