通过等离子体喷射法硅衬底制备金刚石的试验,研究了硅片规格、硅片前期预处理、金刚石膜沉积以及后期热处理等对制备复合基片性质和裂纹产生的影响,对各个工序进行优化和改进,确定了制备金刚石膜/硅复合基片最佳的工艺流程.实验结果表明:在硅基片制备的金刚石膜厚度大于20 μm,抛光后金刚石膜表面粗糙度Ra达到5.2 nm,剩余金刚石膜厚度大于10 μm,平面度小于30 μm,复合基片各项指标均达到电子器件制作的技术要求.%Diamond films were deposited on Si substrate by plasma jet. The influence of size and pretreatment method of silicon wafer, as well as diamond film deposition and heat treatment on the characteristics and crack of composite substrate were investigated. The fabrication processes for the diamond film/Si composite substrates was optimized. The results showed that; the thickness of diamond film deposited on Si substrate was more than 20 μm. After polishing, the surface roughness(Ra) of diamond film reached 5. 2 nm. The thickness of residual diamond film was more than 10 μm, and the flatness was less than 30 μm. The indexes of composite substrates met technical requirements of electronic components.
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