Ellipsometric Study of SiOx Thin Films by Thermal Evaporation

摘要

This paper presents a study of amorphous SiOx thin films by means of Variable Angle Spectroscopic Ellipsometry (VASE) technique. Tauc Lorentz, Lorentz and Cauchy models have been used to obtain physical thickness and complex refractive index (n and k) from experimental data. In order to obtain a wide range to x stoichiometry values, the films were prepared by vacuum thermal evaporation of SiO on glass substrates, under different and controlled deposition conditions.