Properties of Al_(2)O_(3) Films Prepared by Reactive Evaporation at High Substrate Temperatures

摘要

Al2O3, films were deposited by reactive evaporation through a concentrated water vapor region at high substrate temperatures from 800 C to 1250℃. The effect of the substrate temperature on microstructure and crystalline phases was studied in detail by x—ray diffraction （XRD） and scanning electron microscopy （SEM）. It has been found that the substrate temperature significantly influenced the crystalline phases and the crystalline growth. At a lower substrate temperature of 800 C, the structure was predominantly amorphous with a slight a—Al-2O3, and the equilibrium a—A12O3 appeared at higher substrate temperatures （ 950℃）. The larger crystalline grains were caused by the higher substrate temperature, and reached their maximum at 1200 C.