In this letter, the electrical transport of iron-passivated porous silicon (IPS) with stable optical properties was studied. The R-T characteristic measured in four-contact method shows that the impurity level dominates its transport properties. The I-V characteristic measured in ambient air are curvy especially when the voltage is high, which obviously originates from heat effect. The I-V characteristics of IPS between coplanar two contacts were also measured at different temperature for studying the influence of Schottky barrier on the transport. Our theoretical analyses indicate that these results can be well reproduced by the tunneling model. As far as porous silicon (PS) light emitting devices are concerned, the current through PS must be restricted to certain range.
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