Magnetic and Transport Properties of Mn_(0.98)Cr_(0.02)Te Epitaxial Films Grown on Al_2O_3 Substrates

摘要

The epitaxial Mn_(0.98)Cr_(0.02)Te films on single crystal Al_2O_3(0001) substrates were prepared by pulsed laser deposition.The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃.When the substrate temperature reached700 ℃,the film was island growth and the manganese oxides phase appeared.The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling.The temperature dependence of the electrical resistance of Mn_(0.98)Cr_(0.02)Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.