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High-performance UV detectors based on 2D CVD bismuth oxybromide single-crystal nanosheets

         

摘要

Two-dimensional(2D)ternary wide-bandgap semiconducting materials have great potential in power device,flexible electronic device,short-wavelength light emitting diodes(LEDs)and photodetectors due to the controllable bandgap,strong light-material interaction,and controlled freedom degree of stoichiometry variation.However,it is still a great challenge to precisely control the growth of high-quality 2D ternary wide-bandgap semiconducting materials due to the variety of components,which hinders their development for practical applications.In this work,high-quality 2D ternary bismuth oxybromide single-crystal nanosheets with a high yield were prepared by space-confined chemical vapor deposition(CVD)method.The devices based on 2D ultrathin BiOBr single-crystal nanoflakes show a high UV detecting performance including low dark current(Idark)of 1.46pA and high re s ponsivity(R),external quantum efficiency(EQE)and detectivity(D*)of 14.96 A W-1,5460%,and 5.74 × 10^10 Jones,respectively,as well as fast response process(τrise=80 ms,τdecay=40 ms).The excellent UV performance can be ascribed to the photogating effect by trapped states,which endow it with great potential for high-performance UV detectors.

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