首页>
中文期刊>
《中国物理:英文版》
>The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
Direct current(DC) reverse step voltage stress is applied on the gate of an AlGaN/GaN high-electron mobility transistor(HEMT).Experiments show that parameters degenerate under stress.Large-signal parasitic source/drain resistance(RS/RD) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test(DUT).Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon,and surface state recovery is the major reason for the recovery of device parameters.
展开▼
机译:Studies from National Cheng Kung University Have Provided New Data on Materials Research (Performance Comparison of Lattice-matched Alinn/gan/algan/gan Double-channel Metaloxide-semiconductor High-electron Mobility Transistors With Planar …)