School of Material Science and Engineering;
Xiangtan University;
Xiangtan 411105;
China;
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory;
China Electronic Product Reliability and Environmental Testing Research Institute;
Guangzhou 510610;
China;
Northwest Institute of Nuclear Technology;
Xi'an 710024;
China;
heavy ion; silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFET); drain–gate channel; drain–source channel; single event burnout; TCAD simulation;