表面碳化的硅纳米孔柱阵列的H2S室温电容传感特性

摘要

通过将硅纳米孔柱阵列( Si- NPA)进行高温碳化处理,制备出一种SiC/Si-NPA复合纳米体系.对SiC/Si-NPA的表面形貌和结构表征揭示,生长于Si-NPA上的SiC薄膜由具有立方结构的SiC纳米颗粒组成,厚度为～200 nm.SiC/Si-NPA整体上保持了Si-NPA原有的柱状阵列结构特征.对浓度介于0～1 200× 10-6的H2S气体的室温传感性能测试表明,SiC/Si-NPA对H2S气体的电容响应灵敏度可高达790％,而其对400× 10-6浓度H2S气体的响应和恢复时间则分别为170 s和200 s,元件具有较好的测量重复性和稳定性.SiC/Si-NPA可能是一种室温条件下较为理想的H2S气体传感材料.%Through a high-temperature thermal treatment process,the surface of silicon nanoporous pillar array(Si-NPA)was carbonized and a SiC/Si-NPA nanocomposite system was prepared. The characterization on the surface morphology and structure disclosed that the SiC film grown on Si-NPA was composed of cubic-structure SiC nanoparticles with a thickness of ～ 200 nm. The architectural feature of the regular pillar array for Si-NPA was remained in SiC/Si-NPA. The measurements on the room-temperature H2S sensing properties in a gas concentration range of 0 ～ 1 200×l0-6 proved that the capacitive response sensitivity of SiC/Si-NPA to H2S could be as high as 790%,while the response and recovery times obtained for H2S gas with a concentration of 400 × 10-6 were determined to be ～ 170 s and 200 s,respectively. The sensor exhibited an excellent measurement reproducibility and stability. Our results indicated that SiC/Si-NPA might be an ideal sensing material for developing H2S gas sensors being operated at room temperature.