Microstructure and Electric Properties of Dy and Sm-Doped Bismuth Titanate Ceramics

摘要

The effect of Dy and Sm doping on microstructure and electric properties of bismuth titanate ceramics were investigated by means of XRD, SEM and AFM. The results showed that the grain growth habit was anisotropy of BIT ceramics doped with Dy, Sm at a concentration range of 0.5%～2.5%. However, c-axis decreased more obviously with increasing dopant concentration of Sm-doped sample than Dy-doped sample. As a result, the shape of grains of Sm-doped sample were granular, in contrast with Dy-doped sample with template particles. The grain size of Sm-doped sample decreased significantly, which led to a large dielectric constant and remanent polarization.