A novel transparent conducting oxide, PrTiO3-doped indium oxide ( IPTO) , is developed via double source reactive electron beam evaporation technology. The film exhibits a high work func-tion of 5. 14 eV and its stability is demonstrated in air for two months. The numerical values of opti-cal and electrical properties of IPTO film and the commercial ITO are similar. Two OLEDs were fab-ricated by employing IPTO and ITO as anode, respectively. For device with IPTO anode, the peak luminance is 85 140 cd/m2 and maximum external quantum efficiency is 3. 16%, which are 3 times and 1. 13 times of the ITO device. It has been demonstrated that the improvements in device per-formance are achieved for the IPTO-anode OLED.%新型IPTO( PrTiO3掺杂In2 O3)薄膜的可见光透过率及导电性可与商业化的ITO薄膜媲美。采用双源电子束设备制备了一种新型的IPTO透明导电薄膜,通过开尔文探针法测试,其功函数为5.14 eV。为验证新型IPTO透明导电阳极对有机电致发光器件性能的影响,将IPTO替代商业化ITO作为阳极制备了有机电致发光器件。基于IPTO阳极的器件的亮度最大值为85140 cd/m2,外量子效率最大值为3.16%,分别为以ITO为阳极的器件的3倍及1.13倍。这种性能的改善是由于IPTO具有较小的表面粗糙度及较高的功函数,可以降低阳极的注入势垒,有利于电荷向有机层注入,改善了器件内的空穴及电子的注入平衡。
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