首页> 中文期刊>液晶与显示 >薄膜晶体管液晶显示器阵列工艺最终关键尺寸测试方法研究

薄膜晶体管液晶显示器阵列工艺最终关键尺寸测试方法研究

     

摘要

Final inspection critical dimension (FICD)is an important parameter to evaluate the per-formance of thin film transistor liquid crystal display (TFT-LCD)products.The method to obtain an accurate FICD data was studied in this paper.By a large number of experimental data and the scanning electron microscope (SEM)images,test conditions and methods were determined.Based on the above analysis,the center of illumination intensity which could provide stable measuring results was selected as the reference value,and the image was collected as golden sample simultaneously.By contrasting the above results and SEM results,the compensation value of the different layers between measured value and true value were obtained.Also the reliability was proved by data analysis of different sizes of products.As a result,calibration period of FICD measurement could be reduced greatly,and relia-ble test standard was provided for future products.%最终关键尺寸是评价薄膜晶体管液晶显示器产品性能的一项重要参数。本文研究了在光源照度变化的条件下得到准确的最终关键尺寸的方法。通过大量的实验测试、数据分析,并配合扫描电子显微镜(SEM)图片,确定最终关键尺寸合适的测试条件和方法。基于上述分析,选取测量值稳定的光照强度区间中心点的光照强度作为标准样品参照值,选取此时样品测试图片作为标准图片。测试结果与 SEM 结果进行对比,得到不同膜层测量值和真实值之间的补偿值。并通过不同尺寸产品的数据收集和分析来验证补偿值的可靠性。通过上述方法,可以极大地缩短最终关键尺寸测量的校正周期,并为今后新产品开发提供可靠的测试标准。

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