首页> 中文期刊>无机化学学报 >一维链状氧族化合物Mn(en)3CdSnTe4的制备及其半导体性质的研究

一维链状氧族化合物Mn(en)3CdSnTe4的制备及其半导体性质的研究

     

摘要

The solvothermal technique was used for the synthesis of [Mn(en)3]CdSnTe4 (Ⅰ).The crystal structure has been determined by single crystal X-ray diffraction techniques. The crystal belongs to the triclinic, space group P1(No.1) with unit cell a=9.134(2), b=10.085(3), c=12.691(3)((°A)), α=73.52(2)°, β=86.05(2)°, γ=76.43(2)°, V=1089.7(5)(°A)3, Z=2. The results show that the structure is an one-dimensional framework containing a linear chain Zintl anion, 1∞[CdSnTe4]2- and a complex cation,1∞[Mn(en)3]2+, Optical studies on the powder sample of Ⅰ suggested that the compound is a semiconductor with a band gap of 1.45 eV.

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