氧空穴在 BaMgAl10O17荧光粉的能量转移过程中的作用

摘要

研究不掺杂和掺 Eu 的 BaMgAl10O17(BAM)荧光粉在真空紫外激发的光致发光(PL)、热致发光(TL)性能.研究发现不掺杂的BAM发射的空穴与缺陷产生的电子陷阱有很大的关系.我们认为这些缺陷与BAM空穴导电层的氧空穴有关.我们还认为掺了 Eu2+的BAM主体存在着缺陷.基于这些结果,我们提出了一种真空紫外激发 BAM:Eu2+荧光粉的能量转移模型.%Photoluminescence (PL) and thermoluminescence (TL) characteristics of the undoped and Eu-doped BaMgAl10O17 (BAM) phosphors are investigated under vacuum ultraviolet (VUV) excitation. It is found that host emission from the undoped BAM is strongly related to the electron traps derived from the defects. We believe that these defects are relative to the oxygen vacancies in the conduction layer of BAM host. We have also confirmed that the defects exist in the BAM host after doping Eu2+ ions. Based on these results, we have proposed an energy transfer model for BAM: Eu2+ phosphor under VUV excitation.