InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer

摘要

An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure on the In0.53Ga0.47As and In0.52Al0.48As buffer layer lattice-matched to InP(001) substrate using mo-lecular beam epitaxy. The effects of AlAs insertion on the InAs nanostructures were investigated and discussed.