Yb掺杂对Ba(Zr0.1Ti0.9)O3陶瓷微观形貌及介电性能的影响

摘要

采用溶胶-凝胶一步法制备了Yb掺杂锆钛酸钡基陶瓷,陶瓷样品的容温变化率均符合Y5V标准,通过XRD、SEM等分析检测手段对陶瓷样品进行表征.探讨了Yb掺杂量对锆钛酸钡基陶瓷微观形貌、介电常数、容温变化率及介电损耗的影响.研究表明:随着Yb掺杂量的增大,陶瓷的晶粒尺寸有增大趋势,室温介电常数呈现出先增大后减小的变化趋势;当Yb掺杂量为0.06mo1％时,陶瓷的晶粒尺寸较小,陶瓷较为致密,其室温介电常数达到最大值18221,介电损耗较小为0.0061.%The Yb-doped Ba(Zr0.1Ti0.9)O3 ceramics were prepared by sol-gel method,which met the Electronic Industries Alliance Y5V specifications.The samples were analyzed by XRD and SEM,etc.The effect of Yb-doping concentration on the microstructure,temperature coefficient of capacitance,dielectric constant and dielectric loss of Yb-dope Ba (Zr0.1Ti0.9)O3 ceramics were investigated.As the Yb-doped concentration increased,the grain sizes increased;the maximum dielectric constant first increased and then decreased at room temperature.As the Yb-doping concentration was 0.06 mol％,the grain size of ceramic was small and it was compact with a dielectric constant of 18221 and a lower dielectric loss below 0.61％ at room temperature.